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IBM Researchers make Better Graphene FETs with Commercializable Bandgap Features external link

blogspot/advancednano (Feedburner) | by noreply@blogger.com (bw) | Thu, Jan 28

University of California at Berkeley had announced in mid-2009 that they had created a tunable bandgap in graphene
The fabrication steps of the dual-gate bi-layer graphene field effect transistor (FET) are described as follows:

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